Enhanced and stable photoluminescence from partially oxidized porous Si coated with Si thin films

Citation
Gg. Siu et al., Enhanced and stable photoluminescence from partially oxidized porous Si coated with Si thin films, J APPL PHYS, 88(6), 2000, pp. 3781-3783
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
88
Issue
6
Year of publication
2000
Pages
3781 - 3783
Database
ISI
SICI code
0021-8979(20000915)88:6<3781:EASPFP>2.0.ZU;2-6
Abstract
Photoluminescence (PL) spectra of partially oxidized porous Si (POPS) coate d with Si thin films were examined using the 488 nm line of Ar+ laser. The obtained PL is stable, peaks at 1.763 eV with a blueshift of similar to 60 meV, and its maximal intensity is seven times larger than that of the POPS. Spectral analysis and the experimental results from infrared spectroscopy and electron spin resonance suggest that the enhanced and stable PL arises from optical transitions in the nonbridging oxygen hole centers (NBOHCs). S i coating mainly leads to introduction of the NBOHCs defects and thus makes the PL intensity enhanced. The blueshift of similar to 60 meV is a result of the local equilibrium of NBOHCs defects under high temperature. (C) 2000 American Institute of Physics. [S0021-8979(00)07019-5].