Epitaxial oxide thin films on Si(001)

Citation
Z. Yu et al., Epitaxial oxide thin films on Si(001), J VAC SCI B, 18(4), 2000, pp. 2139-2145
Citations number
36
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
18
Issue
4
Year of publication
2000
Pages
2139 - 2145
Database
ISI
SICI code
1071-1023(200007/08)18:4<2139:EOTFOS>2.0.ZU;2-D
Abstract
Over the years, the development of epitaxial oxides on silicon has been a g reat technological challenge. Amorphous silicon oxide layer forms quickly a t the interface when the Si surface is exposed to oxygen, making the intend ed oxide heteroepitaxy on Si substrate extremely difficult. Epitaxial oxide s such as BaTiO3 (BTO) and SrTiO3 (STO) integrated with Si are highly desir able for future generation transistor gate dielectric and ferroelectric mem ory cell applications. In this article, we review the recent progress in th e heteroepitaxy of oxide thin films on Si(001) substrate by using the molec ular beam epitaxy technique at Motorola Labs. Structural, interfacial and e lectrical properties of the oxide thin films on Si have been characterized using in situ reflection high energy electron diffraction, x-ray diffractio n, spectroscopic ellipsometry, atomic force microscopy, Auger electron spec troscopy, x-ray photoelectron spectroscopy, high-resolution transmission el ectron microscopy, high-resolution transmission electron energy loss spectr oscopy, capacitance-voltage and current-voltage measurement. We also presen t the transistor results and address the impact of the epitaxial oxide film s on future generation metal-oxide-semiconductor field effect transistors. (C) 2000 American Vacuum Society. [S0734-211X(00)00504-7].