Synthesis and characterization of SiC nanowires through a reduction-carburization route

Citation
Jq. Hu et al., Synthesis and characterization of SiC nanowires through a reduction-carburization route, J PHYS CH B, 104(22), 2000, pp. 5251-5254
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
1520-6106 → ACNP
Volume
104
Issue
22
Year of publication
2000
Pages
5251 - 5254
Database
ISI
SICI code
1520-6106(20000608)104:22<5251:SACOSN>2.0.ZU;2-9
Abstract
Cubic silicon carbide (3C-SiC) nanowires were synthesized through a reducti on-carburization route by using silicon powders and tetrachloride (CCl4) as Si and C sources, and metallic Na as the reductant at 700 degrees C. The a s-prepared SiC nanowires were characterized and studied by X-ray powder dif fraction, transmission electron microscopy, X-ray photoelectron spectra, Ra man backscattering, and photoluminescence spectra at room temperature. The SiC nanowires produced from the present route typically have diameters of 1 5-20 nm and lengths of 5-10 mu m. The influencing factors of the formation of the SiC nanowires were discussed and a possible growth mechanism for the SiC nanowires was proposed.