Na: A new flux for growing hexagonal boron nitride crystals at low temperature

Yano, M Yap, YK Okamoto, M Onda, M Yoshimura, M Mori, Y Sasaki, T

M. Yano et al., Na: A new flux for growing hexagonal boron nitride crystals at low temperature, JPN J A P 2, 39(4A), 2000, pp. L300-L302

14

INGLESE

Article

Apllied Physucs/Condensed Matter/Materiales Science

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP

39

4A

2000

L300 - L302

ISI

0021-4922(20000401)39:4A<L300:NANFFG>2.0.ZU;2-6

The 2075 degrees C melting temperature of boron has hindered the growth of hexagonal boron nitride (h-BN) crystal. The use of Si flux was reported to decrease the growth temperature to 1850 degrees C. In this work, we discove red Na as a new flux for the growth of h-BN crystals at a temperature as lo w as 700 degrees C. The growth of h-BN detected by X-ray diffraction (XRD) was consistent with the hexagonal features observed by scanning electron mi croscopy (SEM). Absorption at similar to 1372 cm(-1) was indicated by Fouri er transform infrared (FTIR) spectroscopy. This absorption was attributed t o the in-plane B-N stretching mode of h-BN. Emissions at photon energies as high as similar to 5.6 eV are observed from cathodoluminescence (CL) spect ra, indicating an optical band gap of at least 5.6 eV.