Erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable

Citation
Yy. Chang et Lh. Chou, Erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable, JPN J A P 2, 39(4A), 2000, pp. L294-L296
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
4A
Year of publication
2000
Pages
L294 - L296
Database
ISI
SICI code
0021-4922(20000401)39:4A<L294:EMOACD>2.0.ZU;2-C
Abstract
The erasing mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable at CD 2X and CD 4X are studied by employing the transmission electron microscopy (T EM). The mechanisms of laser-induced crystallization vary with linear veloc ity as well as erase power. Under CD 2X recording, erasing is proceeded wit h nucleation and growth mechanism at low erase laser power. However, it is the direct grain growth that controls the mechanism of erasing at higher er ase power: Under CD 4X recording, the erasing is dominated by direct grain growth originated from the interface between amorphous marks and their neig hboring crystalline region, and the erase power determines the location whe re the grain growth begins.