Room temperature coulomb oscillation of a single electron switch with an electrically formed quantum dot and its modeling

Citation
Dh. Kim et al., Room temperature coulomb oscillation of a single electron switch with an electrically formed quantum dot and its modeling, JPN J A P 1, 39(4B), 2000, pp. 2329-2333
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
4B
Year of publication
2000
Pages
2329 - 2333
Database
ISI
SICI code
0021-4922(200004)39:4B<2329:RTCOOA>2.0.ZU;2-H
Abstract
The room temperature operation of a single electron switch fabricated by co nventional Si large-scale integration (LSI) technologies has been demonstra ted. The quantum dot formed by the electric field effect of a dual gate str ucture was miniaturized to a smaller size than the state-of-the-art feature size, using the controllable process technologies such as polysilicon reox idation and polysilicon sidewall formation. Electrical measurement showed a room temperature Coulomb oscillation and a movement of the oscillation pea k in two independently controllable tunnel junctions. Based on the device p hysics, the modified macro modeling of fabricated single electron switches was performed. Existing concept of single electron transistor (SET) macro m odeling was first applied to the experimental result, and the circuit perfo rmance of the fabricated device was effectively predicted using this modeli ng scheme.