Application of CMP process monitor to Cu polishing

Citation
T. Kojima et al., Application of CMP process monitor to Cu polishing, IEEE SEMIC, 13(3), 2000, pp. 293-299
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
0894-6507 → ACNP
Volume
13
Issue
3
Year of publication
2000
Pages
293 - 299
Database
ISI
SICI code
0894-6507(200008)13:3<293:AOCPMT>2.0.ZU;2-F
Abstract
We have developed a chemical mechanical polishing (CMP) process monitor whi ch uses polishing vibration. The monitor enables us to accurately detect th e polishing end point in copper (Cu) polishing even when the process condit ions such as initial film thickness, slurry flow and polishing rate are cha nged and when polishing multilayer film. Furthermore, the monitor is not on ly applicable to Cu polishing but also to planarizing polishing of an inter -level dielectric layer The monitor can be also used to control the process es and the equipment because of its capability to detect abnormalities in t he polishing conditions.