Identifying the character of intrinsic stacking faults in the A15 compoundNb3Al

Citation
Ts. Rong et al., Identifying the character of intrinsic stacking faults in the A15 compoundNb3Al, PHIL MAG L, 80(8), 2000, pp. 519-524
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
0950-0839 → ACNP
Volume
80
Issue
8
Year of publication
2000
Pages
519 - 524
Database
ISI
SICI code
0950-0839(200008)80:8<519:ITCOIS>2.0.ZU;2-B
Abstract
The character of intrinsic stacking faults on {001} in the A15 intermetalli c compound Nb3Al has been investigated using energy-dispersive X-ray spectr oscopy in a field-emission-gun transmission electron microscope. Line scans were obtained across edge-on faults with an electron beam of approximate d iameter 0.5 nm and it was found that the Al concentration is enhanced at th e fault. Taken in conjunction with crystallographic data obtained previousl y, this implies that a {004} layer composed of Nb atoms only is removed to form these intrinsic stacking faults in Nb3Al. The configuration of these f aults implies that they may form by Nb vacancy coalescence and could act as embryonic nuclei for the precipitation of the D8(b) compound Nb2Al.