Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100)

Citation
Y. Teramoto et al., Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100), APPL SURF S, 159, 2000, pp. 67-71
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
159
Year of publication
2000
Pages
67 - 71
Database
ISI
SICI code
0169-4332(200006)159:<67:PCIISD>2.0.ZU;2-C
Abstract
The interface state densities near the midgap were measured with the progre ss of oxidation of atomically flat Si(100) surface. It was found that the i nterface state distribution in Si bandgap changes periodically with the pro gress of oxidation. Namely, the interface state density near the midgap of Si decreases drastically at oxide film thickness where the surface roughnes s of oxide film takes its minimum value, while it does not decrease at oxid e film thickness where the surface roughness takes its maximum value. In or der to minimize interface state densities, the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm. (C) 2000 Publishe d by Elsevier Science B.V.