sp3s* tight-binding parameters for transport simulations in compound semiconductors

Citation
G. Klimeck et al., sp3s* tight-binding parameters for transport simulations in compound semiconductors, SUPERLATT M, 27(5-6), 2000, pp. 519-524
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
0749-6036 → ACNP
Volume
27
Issue
5-6
Year of publication
2000
Pages
519 - 524
Database
ISI
SICI code
0749-6036(200005/06)27:5-6<519:STPFTS>2.0.ZU;2-I
Abstract
A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight binding models for the nine binary compound semiconductors con sistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The acc uracy of the other bands is sacrificed for the better reproduction of the e ffective masses in the bands of interest. Relevant band edges are reproduce d to within a few meV and the effective masses deviate from the experimenta l values typically by less than 10%. (C) 2000 Academic Press.