High performance SONGS memory cells free of drain turn-on and over-erase: Compatibility issue with current flash technology

Authors
Citation
Mk. Cho et Dm. Kim, High performance SONGS memory cells free of drain turn-on and over-erase: Compatibility issue with current flash technology, IEEE ELEC D, 21(8), 2000, pp. 399-401
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
21
Issue
8
Year of publication
2000
Pages
399 - 401
Database
ISI
SICI code
0741-3106(200008)21:8<399:HPSMCF>2.0.ZU;2-V
Abstract
Nonvolatile SONGS memory cells, fabricated by standard flash EEPROM technol ogy are characterized, in comparison with floating gate memory devices. Its programming speed is comparable with the state-of-the-art flash EEPROM cel ls, while the erase speed is faster and over erase free. The SONGS cells do not suffer from the drain turn-on effect, making it is possible to perform parallel multi-bit-line programming and to achieve tighter distributions o f programmed and erased threshold voltages. These features render SONGS cel ls attractive for direct utilization in existing flash EEPROM technology wi th its forward reading scheme.