Surface modifications of Ga2O3 thin film sensors with Rh, Ru and Ir clusters

Citation
Ac. Lang et al., Surface modifications of Ga2O3 thin film sensors with Rh, Ru and Ir clusters, SENS ACTU-B, 66(1-3), 2000, pp. 80-84
Citations number
1
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
0925-4005 → ACNP
Volume
66
Issue
1-3
Year of publication
2000
Pages
80 - 84
Database
ISI
SICI code
0925-4005(20000725)66:1-3<80:SMOGTF>2.0.ZU;2-Y
Abstract
Semiconducting Ga2O3 thin films react with several different gases at tempe ratures higher than 600 degrees C changing its conductivity. These changes of conductivity are measured by using a Platinum pattern underneath the Ga2 O3 surface, in this project we added on a Ga2O3 surface, which by itself sh ows no strong activity as oxidation catalyst, Iridium, Rhodium and Rutheniu m compounds, which change the sensitivity of the used sensors. Dissolved in organic solvents, these compounds were dispensed on the surface, then - by heating - converted into oxides and metals. This thermal decomposition pro cess led to the formation of clusters. The so formed new sensors showed a h igh reproducibility and stability of their gas-sensitive electrical propert ies. To characterize the sensors they were tested with a variety of differe nt gases and at different temperatures. Interesting results on very low con centrations of Ethanol and Propane were found. (C) 2000 Elsevier Science S. A. All rights reserved.