Radiation damage studies with STAR silicon drift detectors

Citation
J. Takahashi et al., Radiation damage studies with STAR silicon drift detectors, IEEE NUCL S, 47(3), 2000, pp. 903-907
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
0018-9499 → ACNP
Volume
47
Issue
3
Year of publication
2000
Part
2
Pages
903 - 907
Database
ISI
SICI code
0018-9499(200006)47:3<903:RDSWSS>2.0.ZU;2-O
Abstract
Large (6.3 x 6.3cm(2)) linear Silicon Drift Detectors were developed for us e in the SVT, the inner tracking detector of the STAR experiment at the RHI C Collider. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. D etectors and their associated electronics were irradiated with 10(11) - 10( 12)/cm(2), 1 MeV equivalent neutrons and 10(10) - 10(12)/cm(2), 24 GeV prot ons. I-V and C-V characteristics of diode test structures were used to dete rmine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics.