A selective, temperature compensated O-2 sensor based on Ga2O3 thin films

Citation
T. Schwebel et al., A selective, temperature compensated O-2 sensor based on Ga2O3 thin films, SENS ACTU-B, 65(1-3), 2000, pp. 176-180
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
0925-4005 → ACNP
Volume
65
Issue
1-3
Year of publication
2000
Pages
176 - 180
Database
ISI
SICI code
0925-4005(20000630)65:1-3<176:ASTCOS>2.0.ZU;2-W
Abstract
Pure semiconducting Ga2O3 thin films show a reaction to reducing gases as w ell to oxygen variations at operation temperatures between 600 degrees C-90 0 degrees C. By applying surface modifications with catalytically active ox ides like La2O3 or CeO2, a complete suppression of the reaction to reducing gases in oxygen-rich atmospheres could be achieved, yielding devices that only respond to the oxygen content. By an analysis of the desorbing gases w ith NIR-Spectroscopy, varying production rates of carbon oxides and unsatur ated carbohydrates were observed. A modification with manganese oxide yield ed complete gas-insensitive devices, which still show a thermal-activated c onductivity. This effect can he used for temperature compensation purposes. (C) 2000 Elsevier Science S.A. All rights resented.