Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process

Citation
T. Moriya et al., Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process, J VAC SCI A, 18(4), 2000, pp. 1282-1286
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
0734-2101 → ACNP
Volume
18
Issue
4
Year of publication
2000
Part
1
Pages
1282 - 1286
Database
ISI
SICI code
0734-2101(200007/08)18:4<1282:GOPCPA>2.0.ZU;2-D
Abstract
The transport path of particles, that have flaked off a grounded anode of a real parallel-plate radio frequency (rf) plasma etching equipment for tung sten etch-back processing to device wafers on the cathode, is measured by u sing an in situ monitoring system that measures laser light scattered by th e particles. A few particles appear constantly only near the grounded anode while rf power is being supplied. These particles have parabolic trajector ies that open upward. Few particles are observed near the wafer. On the oth er hand, at the timing of the tuning off of rf power, many particles appear near the anode. Their trajectories from the anode to the chamber wall are sharply curved. Near the wafer, which has a negative self-bias voltage, alm ost all the particles' trajectories are from the chamber wall to the wafer. Therefore, the particles move from the anode to the device wafer on the ca thode and keep away from the after-glow plasma as well as from the bulk pla sma. These particles are then attracted to the wafer by its negative self-b ias voltage. These phenomena indicate that the particles generated at the a node have positive charges. (C) 2000 American Vacuum Society. [S0734-2101(0 0)06804-4].