Ph. Steans et al., A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURF SCI, 459(3), 2000, pp. 277-286
Reflection high-energy electron diffraction (RHEED) intensity oscillations
recorded along high-symmetry azimuths during the homoepitaxial growth of Ga
As(lll)A thin films by molecular-beam epitaxy show reentrant behaviour, wit
h oscillations occurring at high and low temperatures but disappearing at i
ntermediate values over a similar to 10 degrees C temperature window. In of
f-symmetry azimuths, however, the oscillations persist at all temperatures.
Scanning tunnelling microscopy images indicate growth-mode changes with te
mperature consistent with the RHEED results. RHEED patterns and rocking cur
ves provide further evidence for a model based on a transition between two-
dimensional layer-by-layer growth and step propagation. (C) 2000 Elsevier S
cience B.V. All rights reserved.