A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films

Citation
Ph. Steans et al., A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURF SCI, 459(3), 2000, pp. 277-286
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
0039-6028 → ACNP
Volume
459
Issue
3
Year of publication
2000
Pages
277 - 286
Database
ISI
SICI code
0039-6028(20000710)459:3<277:ANMFRB>2.0.ZU;2-U
Abstract
Reflection high-energy electron diffraction (RHEED) intensity oscillations recorded along high-symmetry azimuths during the homoepitaxial growth of Ga As(lll)A thin films by molecular-beam epitaxy show reentrant behaviour, wit h oscillations occurring at high and low temperatures but disappearing at i ntermediate values over a similar to 10 degrees C temperature window. In of f-symmetry azimuths, however, the oscillations persist at all temperatures. Scanning tunnelling microscopy images indicate growth-mode changes with te mperature consistent with the RHEED results. RHEED patterns and rocking cur ves provide further evidence for a model based on a transition between two- dimensional layer-by-layer growth and step propagation. (C) 2000 Elsevier S cience B.V. All rights reserved.