Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111) substrates

Citation
M. Ishida et al., Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111) substrates, THIN SOL FI, 369(1-2), 2000, pp. 134-137
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
369
Issue
1-2
Year of publication
2000
Pages
134 - 137
Database
ISI
SICI code
0040-6090(20000703)369:1-2<134:EOAPLO>2.0.ZU;2-C
Abstract
There is a marked difference in the growth features of Si films on Al2O3 wi th and without an Al pre-deposition layer. This difference is studied using coaxial impact-collision ion scattering spectrometer (CAICISS). The termin ating atoms of the Al2O3 substrate surface pretreated by the Al pre-deposit ion layer was identified as being Al atoms combined with O atoms. The Al2O3 was grown epitaxially on Si(lll) substrate by MBE with N2O gas and an Al K nudsen cell. The Al layer was evaporated from the K-cell at a rate of 0.5 A ngstrom/s onto the Al2O3 (111)/Si(111) substrate at room temperature, follo wed by thermal annealing at 880 degrees C for 5 min. In CAICISS measurement s, 2 keV He+ was used as the primary ion, and the time of flight (TOF) spec tra and dependence of the scattered He intensities on the angle of incidenc e angle were studied. An epitaxial Si layer with significantly improved cry stalline quality and surface morphology was obtained. (C) 2000 Elsevier Sci ence S.A. All rights reserved.