Cathodoluminescence and TEM studies of MBE-grown CdSe submonolayers in ZnSe matrix, cladded by ZnSSe, ZnSe and ZnMgSe

Citation
Pa. Trubenko et al., Cathodoluminescence and TEM studies of MBE-grown CdSe submonolayers in ZnSe matrix, cladded by ZnSSe, ZnSe and ZnMgSe, J CRYST GR, 214, 2000, pp. 671-675
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
214
Year of publication
2000
Pages
671 - 675
Database
ISI
SICI code
0022-0248(200006)214:<671:CATSOM>2.0.ZU;2-H
Abstract
We have studied MBE-grown CdSe submonolayers (SMLs) using cathodoluminescen ce (CL) and transmission electron microscopy (TEM). The CdSe SMLs were embe dded into ZnSe matrix layer and made to undergo different lattice strains f rom thick ZnSSe, ZnSe and ZnMgSe cladding layers. It was revealed that the CdSe SML emission line has different energy position and FWHM for the struc tures with variable cladding layers. This characteristic is attributed to t he effect of strain in the ZnSe matrix layer and its surface roughness on t he CdSe distribution along the surface. At the deposition of the CdSe SMLs on unstrained flat surface of ZnSe, the homogeneous quantum well (QW)-like CdZnSe alloy layer is formed. Using the strained roughness surface increase s fluctuations in the Cd distribution along the surface. While, assuming th e compressive ZnSe matrix (ZnSSe cladding layers), the CL line has to be br oadening for the CdSe cluster organization only, in the case of structures with ZnMgSe cladding layers, low-energy offset is observed. This is due to the creation of the CdSe ML islands with relatively large lateral size. (C) 2000 Elsevier Science B.V. All rights reserved.