Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures

Citation
M. Funato et al., Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures, J CRYST GR, 214, 2000, pp. 590-594
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
214
Year of publication
2000
Pages
590 - 594
Database
ISI
SICI code
0022-0248(200006)214:<590:EIPIZH>2.0.ZU;2-P
Abstract
We investigate the interface properties of ZnSSe/GaAs heterovalent heterost ructures, using pn heterojunction diodes. It is found that only when Ga-S b onds are formed at the interface, the current-voltage I-V characteristic ex hibits a negative differential resistance (NDR). The photoresponse of the I -V characteristic suggests that the NDR originates from electron capture to an interface states band related to the Ga-S bonds. The presence of the in terface states is also proved by a deep-level transient spectroscopy. (C) 2 000 Elsevier Science B.V. All rights reserved.