New type of ZnCdS/ZnMgCdS heterostructures lattice-matched to GaAs for selective-area growth

Citation
A. Avramescu et al., New type of ZnCdS/ZnMgCdS heterostructures lattice-matched to GaAs for selective-area growth, J CRYST GR, 214, 2000, pp. 125-129
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
214
Year of publication
2000
Pages
125 - 129
Database
ISI
SICI code
0022-0248(200006)214:<125:NTOZHL>2.0.ZU;2-X
Abstract
A new type of heterostructure ZnCdS/ZnMgCdS that can be grown lattice-match ed to a GaAs substrate and is compatible with the selective area growth at very low temperature is proposed. The growth was performed by metalorganic molecular-beam epitaxy. Selective-area growth was performed using a carbona ceous mask and was successful for the Se-free, ZnCdS ternary and ZnMgCdS qu aternary alloys starting as low as 360 degrees C. A heterostructure lattice -matched to GaAs, with at least 470-meV energy band-gap difference was conf irmed experimentally. (C) 2000 Elsevier Science B.V. All rights reserved.