Single-phase hexagonal GaN grown on AlAs/GaAs(001)

Citation
M. Funato et al., Single-phase hexagonal GaN grown on AlAs/GaAs(001), APPL PHYS L, 77(2), 2000, pp. 244-246
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
77
Issue
2
Year of publication
2000
Pages
244 - 246
Database
ISI
SICI code
0003-6951(20000710)77:2<244:SHGGOA>2.0.ZU;2-3
Abstract
This letter describes successful growth of single-phase hexagonal GaN (h-Ga N) layers on cubic GaAs(001) nominally singular substrates with the assista nce of thin AlAs intermediate layers. The crystallographic relationship bet ween h-GaN and GaAs is extracted from a pole figure to be h-GaN[0001]parall el to GaAs[001] in the growth direction and h-GaN[10(1) over bar 0]parallel to GaAs[<1(1)over bar>0] in the in-plane direction. In a photoluminescence spectrum measured at 20 K, excitonic emission from the h-GaN layer is dete cted at 3.47 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)053 28-6].