Electronic states for InAs(111)A-(2 x 2)S surface studied by angle-resolved photoemission spectroscopy

Citation
S. Ichikawa et al., Electronic states for InAs(111)A-(2 x 2)S surface studied by angle-resolved photoemission spectroscopy, SURF SCI, 454, 2000, pp. 509-513
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
0039-6028 → ACNP
Volume
454
Year of publication
2000
Pages
509 - 513
Database
ISI
SICI code
0039-6028(20000520)454:<509:ESFIX2>2.0.ZU;2-T
Abstract
Valence electronic states for an Inns(111)A-(2 x 2)S surface are investigat ed by using synchrotron radiation angle-resolved photoemission spectroscopy (SRARPES). Three bands at 1.0-1.2, 3.3, and 4.6-4.7 eV below the Fermi lev el are found outside the projection of bulk bands along the (M) over bar-<( Gamma)over bar>-(M) over bar and <(Gamma)over bar>-(K) over bar-(M) over ba r azimuths. A band at 2.8 eV below the Fermi level is found in the normal e mission spectra for the (2 x 2)S surface. This band is located within the p rojection of bulk bands and independent of the momentum component normal to the surface, k(perpendicular to). The four bands are ascribed to surface s tates or surface resonances for the (2 x 2)S surface. The origin of the sur face bands is discussed. (C) 2000 Elsevier Science B.V. All rights reserved .