Effects of excitation energy variability on photoluminescence spectra of CdTe films

Citation
Mc. Garcia et al., Effects of excitation energy variability on photoluminescence spectra of CdTe films, REV MEX FIS, 46(3), 2000, pp. 265-268
Citations number
10
Language
SPAGNOLO
art.tipo
Article
Categorie Soggetti
Physics
Journal title
REVISTA MEXICANA DE FISICA
ISSN journal
0035-001X → ACNP
Volume
46
Issue
3
Year of publication
2000
Pages
265 - 268
Database
ISI
SICI code
0035-001X(200006)46:3<265:EOEEVO>2.0.ZU;2-X
Abstract
We report the photoluminescence spectra of CdTe polycrystalline thin films at 10 K as a function of the exciting photon energy in the 1.62-1.72 eV ran ge, using a Ti-Sapphire laser as the exciting light. Our preliminary result s indicate that the ratio associated to the maximum intensity of the bound exciton band (I-E) to the corresponding associated to the defect band (I-D) shows a resonant increment in the range between 1.62-1.65 eV of the excita tion photon energy. This behavior is attributed to the efficient emission o f LO-phonons during the thermalization process of the created photocarriers in their corresponding bands. Moreover, as a result an increase also of bo und excitons to Cd vacancies is also observed. We have also identified in t he on-resonance region two deep levels associated to the defects band, thro ugh the deconvolution in a double structure of this band.