Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Citation
Sr. Johnson et al., Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs, J VAC SCI B, 18(3), 2000, pp. 1545-1548
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1545 - 1548
Database
ISI
SICI code
1071-1023(200005/06)18:3<1545:LWPITA>2.0.ZU;2-0
Abstract
GaPAsSb type-I quantum wells and symmetric InGaAs/GaPAsSb/InGaAs type-II qu antum wells are proposed as long wavelength active layers for GaAs based op toelectronic devices. Room temperature photoluminescence from 1.3 to 1.5 mu m is observed from the type-II quantum wells, while low temperature photol uminescence at 1.25 mu m is observed from type-I quantum wells. A reflectio n high-energy electron diffraction peak that is extended pal-allel to the s urface, while its width is perpendicular to the surface is narrow, suggests that spontaneous lateral composition modulation occurs in the GaPAsSb laye rs. (C) 2000 American Vacuum Society. [S0734-211X(00)02703-7].