Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications

Citation
Ds. Yoon et al., Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications, EL SOLID ST, 3(8), 2000, pp. 373-376
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
1099-0062 → ACNP
Volume
3
Issue
8
Year of publication
2000
Pages
373 - 376
Database
ISI
SICI code
1099-0062(200008)3:8<373:IORPLA>2.0.ZU;2-H
Abstract
The effects of the amount of RuO2 added in the Pt film on the electrical pr operties of the deposited Pt-RuO2 film on the n(2+)-poly-Si substrate by us ing metal mask of 500 mu m dot in size were investigated at the temperature range of 500-700 degrees C in air. When the Pt film was prepared without R uO2 addition, it showed the higher total resistance and nonlinear character istics, attributed to the oxidized layer at the Pt/n(2+)-poly-Si interface formed by reaction between the indiffused oxygen through Pt grain boundarie s and Si during annealing in air. The Pt layer fabricated by RuO2 incorpora tion exhibited the lower total resistance and ohmic behavior up to 700 degr ees C and suppressed the reaction of Pt-silicide up to 800 degrees C. In th e latter case, the incorporation of ruthenium dioxide (RuO2) into the Pt bo ttom electrode layer led to the retardation of the interdiffusion of oxygen , Si, and Pt up to 700 degrees C, resulting from RuO2 stuffing effect in th e polycrystalline Pt film. Consequently, this implies that the RuO2-stuffed Pt layer is expected to perform as a bottom electrode as well as diffusion barrier. (C) 2000 The Electrochemical Society. S1099-0062(00)03-125-4. All rights reserved.