Ds. Yoon et al., Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications, EL SOLID ST, 3(8), 2000, pp. 373-376
The effects of the amount of RuO2 added in the Pt film on the electrical pr
operties of the deposited Pt-RuO2 film on the n(2+)-poly-Si substrate by us
ing metal mask of 500 mu m dot in size were investigated at the temperature
range of 500-700 degrees C in air. When the Pt film was prepared without R
uO2 addition, it showed the higher total resistance and nonlinear character
istics, attributed to the oxidized layer at the Pt/n(2+)-poly-Si interface
formed by reaction between the indiffused oxygen through Pt grain boundarie
s and Si during annealing in air. The Pt layer fabricated by RuO2 incorpora
tion exhibited the lower total resistance and ohmic behavior up to 700 degr
ees C and suppressed the reaction of Pt-silicide up to 800 degrees C. In th
e latter case, the incorporation of ruthenium dioxide (RuO2) into the Pt bo
ttom electrode layer led to the retardation of the interdiffusion of oxygen
, Si, and Pt up to 700 degrees C, resulting from RuO2 stuffing effect in th
e polycrystalline Pt film. Consequently, this implies that the RuO2-stuffed
Pt layer is expected to perform as a bottom electrode as well as diffusion
barrier. (C) 2000 The Electrochemical Society. S1099-0062(00)03-125-4. All
rights reserved.