Retarded diffusion of phosphorus in silicon-on-insulator structures

Citation
H. Uchida et al., Retarded diffusion of phosphorus in silicon-on-insulator structures, JPN J A P 2, 39(2B), 2000, pp. L137-L140
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
2B
Year of publication
2000
Pages
L137 - L140
Database
ISI
SICI code
0021-4922(20000215)39:2B<L137:RDOPIS>2.0.ZU;2-C
Abstract
Phosphorus diffusion profiles in bonding silicon-on-insulator (SOI) structu res are compared with those in bulk Si. Phosphorus diffusion is carried out at 900 and 1000 degrees C, using a spin-on-glass source which enables achi evement of a high surface concentration near solid solubility. The diffusio n methods consist of both predeposition diffusion in N-2 ambient and drive- in diffusion in N-2 or O-2 ambients following a short time predeposition. R esults show that predeposition diffusion in the SOI structures is retarded at 900 degrees C as compared with that in bulk Si, while it is not at 1000 degrees C. The diffusion retardation appears more clearly for the SOI struc ture with a thinner active layer and longer diffusion time. In the drive-in diffusion at 900 degrees C, retardation occurs in O-2 ambient, but not in N-2 ambient. These results are explained by considering the extinction of e xcess interstitial Si at the Si/SiO2 interface in the SOI structure.