Time-resolved measurement of surface band bending of cleaved GaAs(110) andInP(110) by high resolution XPS

Citation
Zw. Deng et al., Time-resolved measurement of surface band bending of cleaved GaAs(110) andInP(110) by high resolution XPS, APPL SURF S, 158(1-2), 2000, pp. 58-63
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
158
Issue
1-2
Year of publication
2000
Pages
58 - 63
Database
ISI
SICI code
0169-4332(200005)158:1-2<58:TMOSBB>2.0.ZU;2-5
Abstract
GaAs(100) and InP(100) samples were cleaved in UHV to give (110) surface in order to investigate their energy band changes using high resolution x-ray photoelectron spectroscopy (XPS) measurement. It was revealed that the sur face band of a heavy doped n-GaAs(110) sample bent upward 0.4 eV and that o f a heavy doped p-GaAs(110) bent downward 0.3 eV to the midgap after cleava ge whereas the surface band of a heavy doped n-InP(110) sample bent upward 0.1 eV and that of a heavy doped p-InP(110) bent downward 0.65 eV to the mi dgap. As for the causes of band bending, we excluded the possibility of sur face charging, X-Ray radiation damage and the effect of residual gas in UHV during XPS measurement. The experimental results strongly suggest that the band bending process was caused by the surface lattice relaxation after cl eavage. (C) 2000 Elsevier Science B.V. All rights reserved.