We measured electronic transport and magnetization of a metallic and ferrom
agnetic (Ga,Mn)As thin film epitaxially grown on a GaAs  substrate. In
-plane ((001)) anisotropic magnetoresistance (AMR) was affected by the curr
ent direction to the crystalline, which is phenomenologically explained by
the anisotropy of the magnetization. The magnetoresistance for perpendicula
r field showed reproducible irregular oscillations, which are attributed to
the Barkhausen effect. (C) 2000 Elsevier Science B.V. All rights reserved.