Anisotropy and Barkhausen jumps in diluted magnetic semiconductor (Ga,Mn)As

Citation
T. Hayashi et al., Anisotropy and Barkhausen jumps in diluted magnetic semiconductor (Ga,Mn)As, PHYSICA B, 284, 2000, pp. 1175-1176
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
0921-4526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1175 - 1176
Database
ISI
SICI code
0921-4526(200007)284:<1175:AABJID>2.0.ZU;2-V
Abstract
We measured electronic transport and magnetization of a metallic and ferrom agnetic (Ga,Mn)As thin film epitaxially grown on a GaAs [001] substrate. In -plane ((001)) anisotropic magnetoresistance (AMR) was affected by the curr ent direction to the crystalline, which is phenomenologically explained by the anisotropy of the magnetization. The magnetoresistance for perpendicula r field showed reproducible irregular oscillations, which are attributed to the Barkhausen effect. (C) 2000 Elsevier Science B.V. All rights reserved.