Staircase-like hysteresis loop in III-V compound diluted magnetic semiconductor (In,Mn)As at low temperatures

Citation
A. Oiwa et al., Staircase-like hysteresis loop in III-V compound diluted magnetic semiconductor (In,Mn)As at low temperatures, PHYSICA B, 284, 2000, pp. 1173-1174
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
0921-4526 → ACNP
Volume
284
Year of publication
2000
Part
2
Pages
1173 - 1174
Database
ISI
SICI code
0921-4526(200007)284:<1173:SHLIIC>2.0.ZU;2-R
Abstract
We have found a staircase-like hysteresis loop in III-V compound diluted ma gnetic semiconductor (In,Mn)As in magneto-transport behavior below 1 K. The observed stepwise changes are attributed to the corresponding jumps in mag netization and are associated with the depinning process of domain walls. W e discuss thermal avalanche effect and quantum tunneling, (C) 2000 Elsevier Science B.V. All rights reserved.