Epitaxial ferroelectric PbZrxTi1-xO3 thin films for non-volatile memory applications

Citation
C. Guerrero et al., Epitaxial ferroelectric PbZrxTi1-xO3 thin films for non-volatile memory applications, MICROEL REL, 40(4-5), 2000, pp. 671-674
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
0026-2714 → ACNP
Volume
40
Issue
4-5
Year of publication
2000
Pages
671 - 674
Database
ISI
SICI code
0026-2714(200004/05)40:4-5<671:EFPTFF>2.0.ZU;2-E
Abstract
Epitaxial ferroelectric PbZrxTi1-xO3 (PZT) thin film capacitors with SrRuO3 (SRO) bottom electrodes have been fabricated by pulsed laser deposition on LaAlO3 (001) substrates. X-ray diffraction measurements revealed that epit axial heterostructures with a high crystalline quality were obtained. Ferro electric capacitors were defined by thermal evaporation of aluminium contac t pads onto the PZT films. Remnant polarizations of about 13 mu C/cm(2) and coercive fields of about 150 kV/cm are obtained at a frequency of 10 Hz. T he capacitors show very little fatigue of the remnant polarization with cum ulative switching. A tendency to imprint, arising from the use of asymmetri c electrodes, is observed. (C) 2000 Elsevier Science Ltd. All rights reserv ed.