Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780 degrees C

Citation
Zy. Zhang et al., Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780 degrees C, MAT SCI E B, 75(2-3), 2000, pp. 177-179
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
75
Issue
2-3
Year of publication
2000
Pages
177 - 179
Database
ISI
SICI code
0921-5107(20000601)75:2-3<177:EMSFGO>2.0.ZU;2-M
Abstract
In this paper, our work is reported on heteroepitaxial monocrystalline SiC films deposited on single-crystalline (111) silicon by hot filament chemica l vapor deposition (HFCVD) with a gas mixture of methane, silane and hydrog en at a low temperature of 780 degrees C. The surface micrography and thick ness of SiC films on Si (Ill) substrate were analyzed by scanning electron microscopy (SEM). The characteristics and crystallinity of the SIC film wer e examined by X-ray diffractometer (XRD), transmission electron microscopy (TEM) and auger electron spectrum (AES). The peaks of Si (111), SIC (111) a nd SiC (222) planes were observed on the X-ray diffraction spectrum, but no t the peaks of the SiC (200) or SiC (220) planes. The diffraction pattern o f TEM also indicates that the SIC films are single-crystalline structure. A ES shows that the element ratio of silicon and carbon in the SIC film is 1: 1.004. The preparation conditions were as follows: a filament temperature o f 2100 degrees C, substrate temperature of 780 degrees C, hydrogen flow rat e of 100 seem, methane concentration of 8.0%, silane concentration of 1.0% and a reaction pressure of 150 Pa. (C) 2000 Elsevier Science S.A. All right s reserved.