Growth of adhesive c-BN films on a tensile BN buffer layer

Citation
Yk. Yap et al., Growth of adhesive c-BN films on a tensile BN buffer layer, DIAM RELAT, 9(3-6), 2000, pp. 592-595
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
592 - 595
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<592:GOACFO>2.0.ZU;2-L
Abstract
Cubic phase boron nitride (c-BN) film grown on intrinsic BN interlayer has been found to peel off near the interface. The strain force induced by the compressive c-BN film is suggested to extend the lattice spacing between th e h-BN/t-BN (0002) planes, increase the lattice mismatch between BN phases and lead to the peeling of c-BN. Based on this concept, a new BN buffer lay er enhancing c-BN adhesion has been grown. This buffer is almost stoichiome tric in composition, tensile in stress and contains hexagonal planes that a re not properly aligned normal to the substrate surface. An improvement in c-BN adhesion was related to such a disordered microstructure. which contai ns covalent B-N bonds in the direction parallel to the substrate surface. S uch bonding is important to sustain the strain force that occurs near the b oundary of the c-BN and BN interlayer, maintain lattice matching and thus i mprove c-BN film adhesion. Tensile stress of the buffer layer is also thoug ht to compensate for the compressive stress of c-BN films and to help impro ve the adhesion. (C) 2000 Elsevier Science S.A. All rights reserved.