Epitaxial aluminum nitride thin films grows by pulsed laser deposition in various nitrogen ambients

Okamoto, M Yamaoka, M Yap, YK Yoshimura, M Mori, Y Sasaki, T

M. Okamoto et al., Epitaxial aluminum nitride thin films grows by pulsed laser deposition in various nitrogen ambients, DIAM RELAT, 9(3-6), 2000, pp. 516-519

15

INGLESE

Article

Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering

DIAMOND AND RELATED MATERIALS

0925-9635 → ACNP

9

3-6

2000

516 - 519

ISI

0925-9635(200004/05)9:3-6<516:EANTFG>2.0.ZU;2-8

The effect of nitrogen ambient pressure on growth of AlN films has been exa mined. High-quality epitaxial AlN films were grown on (0001) sapphire subst rates using pulsed laser deposition from a sintered AlN target in low nitro gen ambient of 9.0 x 10(-5) Torr. The orientation of AlN films can be contr olled by nitrogen pressure. AlN films are c-axis oriented when grown in a n itrogen pressure of 9.0 x 10(-5) to 4.0 x 10(-2) Torr. Film orientation con verted to a-axis as nitrogen pressure increased to 4.0 x 10(-1) Torr. The X -ray rocking curves of the AlN (0002) peak became narrower with decreasing ambient pressure and yielded a full width at half-maximum of 0.078 degrees. The N/Al composition ratio increases with nitrogen pressure. (C) 2000 Else vier Science S.A. All rights reserved.