Epitaxial aluminum nitride thin films grows by pulsed laser deposition in various nitrogen ambients

Citation
M. Okamoto et al., Epitaxial aluminum nitride thin films grows by pulsed laser deposition in various nitrogen ambients, DIAM RELAT, 9(3-6), 2000, pp. 516-519
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
516 - 519
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<516:EANTFG>2.0.ZU;2-8
Abstract
The effect of nitrogen ambient pressure on growth of AlN films has been exa mined. High-quality epitaxial AlN films were grown on (0001) sapphire subst rates using pulsed laser deposition from a sintered AlN target in low nitro gen ambient of 9.0 x 10(-5) Torr. The orientation of AlN films can be contr olled by nitrogen pressure. AlN films are c-axis oriented when grown in a n itrogen pressure of 9.0 x 10(-5) to 4.0 x 10(-2) Torr. Film orientation con verted to a-axis as nitrogen pressure increased to 4.0 x 10(-1) Torr. The X -ray rocking curves of the AlN (0002) peak became narrower with decreasing ambient pressure and yielded a full width at half-maximum of 0.078 degrees. The N/Al composition ratio increases with nitrogen pressure. (C) 2000 Else vier Science S.A. All rights reserved.