Growth of nitride crystals, BN, AlN and GaN by using a Na flux

Citation
M. Yano et al., Growth of nitride crystals, BN, AlN and GaN by using a Na flux, DIAM RELAT, 9(3-6), 2000, pp. 512-515
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
512 - 515
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<512:GONCBA>2.0.ZU;2-4
Abstract
Bulk crystals of BN, AlN and GaN were grown by means of Na flux. All these crystals were grown at a temperature of 800 degrees C and a nitrogen pressu re of 100 atm, relatively lower than that required by many flux and melt gr owth methods. High-quality GaN single crystals as large as 0.5 mm were obta ined. Furthermore, the oriented GaN crystals were obtained by means of the seeded Na flux method with the addition of oriented AlN (0001) film in the growth ambient. The nucleation of bulk GaN was spatially confined on top of the AlN film and grown with the GaN [0001] axis parallel to the AlN [0001] axis. In addition, the h-BN polycrystals were confirmed by the h-BN (0002) peak of X-ray diffraction (XRD) at 2 theta = 26.700. A hexagonal grain wit h a size as large as 2 mu m was observed by scanning electron microscopy (S EM). Likewise, AlN crystals were also obtained from Al wires. (C) 2000 Else vier Science S.A. All rights reserved.