Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition

Citation
C. Niikura et al., Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 385-390
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
0022-3093 → ACNP
Volume
266
Year of publication
2000
Part
A
Pages
385 - 390
Database
ISI
SICI code
0022-3093(200005)266:<385:CSOMSF>2.0.ZU;2-B
Abstract
A comparison of structural, optical and electronic properties between undop ed hydrogenated microcrystalline silicon films deposited by hot-wire chemic al Vapor deposition using either a high vacuum reactor or an ultra-high vac uum reactor has been made. The growth process has been assessed by changing the dilution ratio of silane in hydrogen and the process gas pressure, und er the high pressure range (similar to 10(-1) mbar) and the low pressure ra nge (similar to 10(-3) mbar) respectively. Structural properties (crystalli ne, amorphous and void fractions) of the films are analyzed through ultravi olet (UV)-visible ellipsometry and Raman spectroscopy data whereas electron ic properties (majority carrier mobility-lifetime product and activation en ergy of the conductivity) are analyzed through dark conductivity and photoc onductivity. All these results have been interpreted in terms of the flux o f atomic hydrogen arriving on the growing surface, compared with that of ra dicals. This flux ratio is very sensitive to the gas pressure. This study g ives better insight into the hot-wire deposition mechanisms. (C) 2000 Elsev ier Science B.V. All rights reserved.