Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes

Citation
Ds. Ong et al., Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes, J APPL PHYS, 87(11), 2000, pp. 7885-7891
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
87
Issue
11
Year of publication
2000
Pages
7885 - 7891
Database
ISI
SICI code
0021-8979(20000601)87:11<7885:FBMCMO>2.0.ZU;2-C
Abstract
A full-band Monte Carlo model is used to investigate the probability distri bution functions of impact ionization path length and impact ionization ene rgy for electrons and holes in GaAs. The simulations show that the soft ion ization threshold energy in GaAs allows impact ionization to occur at energ ies much higher than the band gap. As a result, secondary carriers have a s horter dead space than newly injected carriers. The ionization path length distributions narrow at higher fields, producing a more deterministic impac t ionization process in thin devices. The model is also used to simulate av alanche multiplication and noise in submicron homojunction GaAs p(+)-i-n(+) diodes. The predicted mean multiplication, < M > and excess noise factor, F are in quantitative agreement with the experimental results, in which F d ecreases as the length of multiplication region is reduced. (C) 2000 Americ an Institute of Physics. [S0021- 8979(00)08211-6].