Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

Citation
A. Sanz-hervas et al., Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy, APPL PHYS L, 76(21), 2000, pp. 3073-3075
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
21
Year of publication
2000
Pages
3073 - 3075
Database
ISI
SICI code
0003-6951(20000522)76:21<3073:IPO(GM>2.0.ZU;2-L
Abstract
We present the heterointerfacial properties of GaAs/AlGaAs multiquantum-wel l structures grown by atmospheric-pressure metalorganic vapor phase epitaxy on (111)A GaAs substrates at a relatively low growth temperature of 600 de grees C. For a 25-period GaAs/Al0.27Ga0.73As multiquantum-well structure wi th a well width of 44 Angstrom, a photoluminescence linewidth of 10.5 meV w as observed, which is smaller than previously reported for a similar GaAs/A lGaAs multiquantum-well structure grown by molecular beam epitaxy on (111)A GaAs. As this linewidth corresponds to a combined well-width fluctuation a nd interfacial roughness throughout the 25 periods of at most +/- 1 monolay er, it is concluded that epitaxial growth on the (111)A surface can result in high-quality heterointerfaces, particularly at low growth temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)03021-7].