We present the heterointerfacial properties of GaAs/AlGaAs multiquantum-wel
l structures grown by atmospheric-pressure metalorganic vapor phase epitaxy
on (111)A GaAs substrates at a relatively low growth temperature of 600 de
grees C. For a 25-period GaAs/Al0.27Ga0.73As multiquantum-well structure wi
th a well width of 44 Angstrom, a photoluminescence linewidth of 10.5 meV w
as observed, which is smaller than previously reported for a similar GaAs/A
lGaAs multiquantum-well structure grown by molecular beam epitaxy on (111)A
GaAs. As this linewidth corresponds to a combined well-width fluctuation a
nd interfacial roughness throughout the 25 periods of at most +/- 1 monolay
er, it is concluded that epitaxial growth on the (111)A surface can result
in high-quality heterointerfaces, particularly at low growth temperatures.
(C) 2000 American Institute of Physics. [S0003-6951(00)03021-7].