Steady-state and time-resolved luminescence in InGaN layers

Citation
R. Seitz et al., Steady-state and time-resolved luminescence in InGaN layers, J LUMINESC, 87-9, 2000, pp. 1202-1205
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
0022-2313 → ACNP
Volume
87-9
Year of publication
2000
Pages
1202 - 1205
Database
ISI
SICI code
0022-2313(200005)87-9:<1202:SATLII>2.0.ZU;2-G
Abstract
InGaN layers are used as active layers of high brightness in nitride-based LEDs and lasers. Despite the progress in device development many of the fun damental optical properties an not completely understood. InGaN samples wit h different In content are studied by steady-state and time-resolved photol uminescence. The low-temperature photoluminescence spectra show a near band edge emission that shifts to lower energies with increasing In content, ex citation wavelength and delay times. The emission is broader than typical e xcitonic emission from binary material. Temperature ependent measurements i ndicate that the near band edge emission is an overlap of various emission bands with different quenching behaviour. (C) 2000 Elsevier Science B.V. Al l rights reserved.