Exciton energy relaxation and exciton mobility edge in (CdMg)Te epilayers studied by time-resolved photoluminescence

Citation
Jx. Shen et al., Exciton energy relaxation and exciton mobility edge in (CdMg)Te epilayers studied by time-resolved photoluminescence, J LUMINESC, 87-9, 2000, pp. 908-910
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
0022-2313 → ACNP
Volume
87-9
Year of publication
2000
Pages
908 - 910
Database
ISI
SICI code
0022-2313(200005)87-9:<908:EERAEM>2.0.ZU;2-J
Abstract
Exciton localization is studied with time-resolved photoluminescence (PL) i n Cd1-xMgxTc epilayers. The energy relaxation rate of excitons is found to be energy dependent and reduces drastically below an effective excitonic mo bility edge. This particular property results in the saturation of the PL i ntensity rise time below the mobility edge and a two-exponential decay for the PL intensity and the energy relaxation of the excitons. (C) 2000 Elsevi er Science B.V. All rights reserved.