Island size scaling for submonolayer growth of InAs on GaAs(001)-(2X4): Strain and surface reconstruction effects

Citation
Gr. Bell et al., Island size scaling for submonolayer growth of InAs on GaAs(001)-(2X4): Strain and surface reconstruction effects, PHYS REV B, 61(16), 2000, pp. 10551-10554
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
1098-0121 → ACNP
Volume
61
Issue
16
Year of publication
2000
Pages
10551 - 10554
Database
ISI
SICI code
1098-0121(20000415)61:16<10551:ISSFSG>2.0.ZU;2-6
Abstract
The submonolayer growth by molecular beam epitaxy of InAs on the GaAs(001)- (2x4) surface has been studied using rapid-quench scanning tunneling micros copy. InAs islands exhibiting the (2x4) reconstruction are formed and show remarkably similar characteristics to GaAs submonolayer homoepitaxy on this surface. Detailed analysis of the islands indicates that strain plays a ne gligible role in their nucleation, and the (2x4) reconstruction dominates b oth island growth and island anisotropy.