Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

Citation
Sw. Jun et al., Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy, APPL PHYS L, 76(19), 2000, pp. 2716-2718
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
76
Issue
19
Year of publication
2000
Pages
2716 - 2718
Database
ISI
SICI code
0003-6951(20000508)76:19<2716:BSEOOI>2.0.ZU;2-4
Abstract
The effect of the isoelectronic surfactant Bi on surface structure and orde ring has been studied for GaInP semiconductor alloys grown by organometalli c vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitu de increase in the step velocity was observed by atomic-force microscopy. B i completely eliminates three-dimensional islands on the singular (001) sur face. (C) 2000 American Institute of Physics. [S0003-6951(00)03919-X].