Effects of temperature and atmosphere on the epitaxial growth of hematite (alpha-Fe2O3) films on the R-, A- and C-planes of sapphire (alpha-Al2O3) bycoating-pyrolysis process

Citation
I. Yamaguchi et al., Effects of temperature and atmosphere on the epitaxial growth of hematite (alpha-Fe2O3) films on the R-, A- and C-planes of sapphire (alpha-Al2O3) bycoating-pyrolysis process, THIN SOL FI, 365(1), 2000, pp. 36-42
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
365
Issue
1
Year of publication
2000
Pages
36 - 42
Database
ISI
SICI code
0040-6090(20000403)365:1<36:EOTAAO>2.0.ZU;2-A
Abstract
Epitaxially grown hematite (alpha-Fe2O3) films were obtained on the R-, A- and C-planes of sapphire (alpha-Al2O3) substrates by a coating-pyrolysis pr ocess in air and in an argon atmosphere. The X-ray diffraction theta-2 thet a scanning and pole-figure analysis showed that the films have grown epitax ially to the substrate surfaces after heat treatment at 500 degrees C and h igher. The crystallinity of the films was evaluated in terms of a full widt h at half maximum (FWHM) of the alpha-Fe2O3 104 peak in the phi scans. The crystallinity of the films increased after annealing in air up to 1000 degr ees C, while the highest epitaxy was obtained at 600 degrees C in argon. Th e degraded crystallinity of the films prepared in argon at higher temperatu res is attributed to the reaction between the film and the substrate due to a decrease in local oxygen partial pressure caused by an organic residue i n the prefired films. (C) 2000 Elsevier Science S.A. All rights reserved.