Optical response of CuIr2X4 (X = S,Se) due to metal-insulator transition

Citation
M. Hayashi et al., Optical response of CuIr2X4 (X = S,Se) due to metal-insulator transition, PHYSICA B, 281, 2000, pp. 631-633
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
0921-4526 → ACNP
Volume
281
Year of publication
2000
Pages
631 - 633
Database
ISI
SICI code
0921-4526(200006)281:<631:OROC(=>2.0.ZU;2-7
Abstract
CUIr2X4 (X = S,Se) are ones of ternary metal chalcogen compounds with a thi ospinel structure. CuIr2S4 undergoes 226 K. We have measured the temperatur e dependence of the a temperature-induced metal-insulator transition around 226 K optical reflection spectra of both samples in the energy regions of 0.005-6 eV in order to study the electronic structure very close to the Fer mi level (E-F) and its change across the metal-insulator transition (X = S) . Obtained optical conductivity spectrum, sigma(omega), of CuIr2S4 below 22 1 K showed a growth of a new band around 0.4 eV instead of a band at 0.7 eV in the metallic phase. The growth of a new band which compensates the decr ease in the spectral intensity of the Drude component suggests the appearan ce of the localized band below the E-F level. (C) 2000 Elsevier Science B.V . All rights reserved.