Gate-controlled diodes for characterization of the Si-SiO2 interface with respect to surface effects of silicon detectors

Citation
C. Becker et al., Gate-controlled diodes for characterization of the Si-SiO2 interface with respect to surface effects of silicon detectors, NUCL INST A, 444(3), 2000, pp. 605-613
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
444
Issue
3
Year of publication
2000
Pages
605 - 613
Database
ISI
SICI code
0168-9002(20000421)444:3<605:GDFCOT>2.0.ZU;2-G
Abstract
In future high-energy physics experiments silicon detectors with a high spa tial resolution will be used for tracking close to the interaction point. B esides crystal damage, the surface damage caused by ionizing irradiation is very important for the long-term performance of these devices. Therefore, systematic characterization of surface effects is necessary. For these inve stigations we designed a test field consistent of MOS structures and gate-c ontrolled diodes to be produced with different vendors. A new gate-controll ed diode with different current and capacitance measurement options will be introduced and first results of parameters evaluated on the unirradiated d evice as well as after irradiation with low energetic electrons, neutrons a nd charged hadrons will be presented. The gate-controlled diode with new fe atures has been shown to be a powerful tool to investigate the oxide and in terface quality before and after irradiation. (C) 2000 Elsevier Science B.V . All rights reserved.