Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD

Citation
Jl. Shi et al., Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD, THIN SOL FI, 364(1-2), 2000, pp. 254-258
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
364
Issue
1-2
Year of publication
2000
Pages
254 - 258
Database
ISI
SICI code
0040-6090(20000327)364:1-2<254:DRPOSH>2.0.ZU;2-Z
Abstract
Heterostructures of Si1-xGex/Si with Ge content x from 14 to 67%, grown on Si by atmospheric pressure chemical vapor deposition (APCVD) at 650 or 700 degrees C, have been studied by photoluminescence (PL) spectroscopy, Normar ski microscopy after Schimmel etching, atomic force microscopy (AFM) and se condary ion mass spectroscopy (SIMS). For SiGe grown by APCVD with a low Ge content (<40%), strain relaxation is achieved by misfit dislocation format ion. For high Ge content (>40%), the relaxation mode is influenced by the d eposition temperature, where the energetically most favorable mechanism wil l dominate. Al 700 degrees C, the SiGe is relaxed by 3D island formation an d the PL alloy band can be correlated to island structuring of the surface. At 650 degrees C, the SiGe is relaxed by misfit dislocations due to the in creased density of born-in point defects at low temperatures. (C) 2000 Else vier Science S.A. All rights reserved.