Electrical characteristics of highly reliable ultrathin hafnium oxide gatedielectric

Citation
L. Kang et al., Electrical characteristics of highly reliable ultrathin hafnium oxide gatedielectric, IEEE ELEC D, 21(4), 2000, pp. 181-183
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
21
Issue
4
Year of publication
2000
Pages
181 - 183
Database
ISI
SICI code
0741-3106(200004)21:4<181:ECOHRU>2.0.ZU;2-O
Abstract
Electrical and reliability properties of ultrathin HfO2 have been investiga ted. Pt electroded MOS capacitors with HfO2 gate dielectric (physical thick ness similar to 45-135 Angstrom and equivalent oxide thickness similar to 1 3.5-25 Angstrom) were fabricated. HfO2 was deposited using reactive sputter ing of Hf target with O-2 modulation technique. Leakage current of the 45 A ngstrom HfO2 sample was about 1 x 10(-4)A/cm(2) at +1.0 V with a breakdown field similar to 8.5 MV/cm. Hysteresis was <100 mV after 500 degrees C anne aling in N-2 ambient and there was no significant frequency dispersion of c apacitance (<1%/dec.). It was also found that HfO2 exhibits negligible char ge trapping and excellent TDDB characteristics with more than ten Sears lif e- time even at V-DD = 2.0 V.