Improved nonlinear coefficient (0.7 pm/V) in silica thermally poled at high voltage and temperature

Citation
Ac. Liu et al., Improved nonlinear coefficient (0.7 pm/V) in silica thermally poled at high voltage and temperature, ELECTR LETT, 36(6), 2000, pp. 555-556
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
0013-5194 → ACNP
Volume
36
Issue
6
Year of publication
2000
Pages
555 - 556
Database
ISI
SICI code
0013-5194(20000316)36:6<555:INC(PI>2.0.ZU;2-G
Abstract
It is shown that in thermally poled silica a substantially increased second -order nonlinearity is induced when both the poling voltage and the tempera ture are increased under standard poling conditions (similar to 275 degrees C/similar to 5 kV). Increases in the voltage result in a nonlinear region with a greater width and buried depth, while increases in the temperature e nhance the peak nonlinear coefficient d(33). In a silica sample poled at 40 0 degrees C and 20kV, a nonlinear region 10 mu m deep was measured with a d (33) of 0.7pm/V which is twice as large as that for a sample poled under st andard conditions, and the highest reliable reported value.