MOVPE growth and characterisation of Zn-doped (GaIn)P layers with respect to surface structure and ordering

Citation
I. Pietzonka et al., MOVPE growth and characterisation of Zn-doped (GaIn)P layers with respect to surface structure and ordering, CRYST RES T, 35(3), 2000, pp. 271-278
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
0232-1300 → ACNP
Volume
35
Issue
3
Year of publication
2000
Pages
271 - 278
Database
ISI
SICI code
0232-1300(2000)35:3<271:MGACOZ>2.0.ZU;2-F
Abstract
(GaIn)P grown on (001)GaAs substrates by metal-organic vapour phase epitaxy (MOVPE) is highly ordered material. In this work the effect of Zn doping o n the epitaxial crystal growth, the ordering behaviour and the surface morp hology is investigated. Zn-doped (GaIn)P layers, grown with phosphine (PH3) , tertiarybutylphosphine (TBP) and ditertiarybutylphosphine (DitBuPH) as ph osphorous precursors, reveal a strong drop of the binary growth rate of InP r(InP) with increasing Zn/III ratio, whereas r(GaP), remains nearly consta nt. The Zn doping efficiency and the ordering behaviour are observed to be dependent on the misorientation of the substrates. Finally, the surface mor phology as a function of the different parameters was analysed by atomic fo rce microscopy (AFM), and no considerable change of the growth mechanism wa s found for Zn-doped layers in comparison to undoped layers.