An analysis of the charge collection process induced by focused MeV ion bea
ms in semiconductor devices is presented. It is based on the extended Shock
ley-Ramo theorem that provides a rigorous mathematical tool for the calcula
tion of the induced charge and current under the assumption of a quasi-stea
dy-state operation of the semiconductor device. A complete description of t
he theory and underlying assumption is given as well as a simple applicatio
n of the method aimed to evaluate the main transport properties of fully de
pleted semiconductors from the analysis of frontal and lateral ion beam ind
uced charge collection (IBICC) measurements. (C) 2000 Elsevier Science B.V.
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