Characterization of Si wafers by mu-PCD with surface electric field

Citation
M. Ichimura et al., Characterization of Si wafers by mu-PCD with surface electric field, MAT SCI E B, 73(1-3), 2000, pp. 230-234
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
230 - 234
Database
ISI
SICI code
0921-5107(20000403)73:1-3<230:COSWBM>2.0.ZU;2-#
Abstract
Carrier recombination lifetime in Si wafers was measured by the microwave r eflectance photoconductivity decay method with a voltage applied between th e wafer and an electrode placed just above the wafer. From the dependence o f the lifetime on the voltage, the following conclusions were drawn: (1) th e surface Fermi level is close to the valence band for the wafers stored in air for several years. (2) positive charge is induced and the surface Ferm i level is shifted to near the conduction band by the dilute HF treatment, and the positive charge remains on the surface under air exposure for more than 1 month: (3) positive charge is also induced by the NH4OH + H2O2 + H2O (SCl) treatment, but its amount is significantly reduced by 1 week of air exposure. (C) 2000 Elsevier Science S.A. All rights reserved.